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Daniel Billingsley Location
Boise, ID, US
Daniel Billingsley Work
Member of Technical Staff @ (October 2023 - Present)
PVD Process Development Engineer @ (March 2017 - Present)
Principal Engineer @ (October 2021 - October 2023)
Offshore Exploration Geologist @ (June 2015 - March 2017)
SiGe CVD Engineer III @ Samsung Austin Semiconductor (May 2014 - May 2015)
Director of EPI Manufacturing @ (June 2012 - May 2014)
Senior Epitaxy Scientist @ (June 2010 - June 2012)
Graduate Research Assistant @ (July 2005 - July 2010)
Daniel Billingsley Education
Georgia Institute of Technology
Ph.D (Electrical & Computer Engineering)
2005-2010
Georgia Institute of Technology
M.S. (Computer Engineering)
2005-2007
University of Louisiana at Lafayette
B.S. (Electrical & Computer Engineering)
2000-2004
Daniel Billingsley Skills
AFM
CVD
Characterization
Chemical Vapor Deposition (CVD)
EDX
HEMTs
Hall
III-Nitrides
LEDs
MBE
MOCVD
Materials Science
Nanotechnology
PECVD
Photolithography
Photoluminescence
Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Powder X-ray Diffraction
Scanning Electron Microscopy
Semiconductors
Thin Films
XRD
Development
Sige
Powder X Ray Diffraction
Plasma Enhanced Chemical Vapor Deposition Pecvd
Chemical Vapor Deposition Cvd
Iii Nitrides
Services
Plasma Enhanced Chemical Vapor Deposition
Chemical Vapor Deposition
Daniel Billingsley Summary
Daniel Billingsley, based in Boise, ID, US, is currently a PVD Process Development Engineer at Micron Technology. Daniel Billingsley brings experience from previous roles at Micron Technology, Linder Oil Co and Samsung Austin Semiconductor. Daniel Billingsley holds a 2005 - 2010 Ph.D in Electrical & Computer Engineering @ Georgia Institute of Technology. With a robust skill set that includes AFM, CVD, Characterization, Chemical Vapor Deposition (CVD), EDX and more. Daniel Billingsley has 4 emails and 1 mobile phone numbers on RocketReach.
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